isc Silicon
PNP Power
Transistor
2SA1043
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -120V(Min) ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SC2433 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power switching applications ·power amplifier ·DC-DC converters
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-30
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-10
A
150
W...