sc Silicon
PNP Power
Transistor
2SA1011
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -0.
5V(Typ.
)@ IC= -0.
5A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min.
) ·Complement to Type 2SC2344 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high-voltage switching, audio frequency power
amplifiers, 100W output predriver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-180
V
VCEO Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-1.
5
A
ICM
Collector Current-Peak
-3.
0
A
PC
Total Power Di...