isc Silicon
PNP Power
Transistor
2SA769
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
:V(BR)CEO= -80(V)(Min.
) ·Complement to Type 2SC1827 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-80
V
VCEO Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-4
A
IB
Base Collector Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-1
A
30
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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