isc Silicon
PNP Power
Transistor
2SA766
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= -150V(Min) ·High Collector Power Dissipation·Complement to Type 2SC1450 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Line-operated vertical deflection output ·Medium power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-150
V
VCEO Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-0.
4
A
ICM
Collector Current-Peak
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-1.
2
A
20
W
150
℃
Tstg
Storage Temperat...