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2SA764

POWER TRANSISTOR

Description

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 4A ·Complement to Type 2SC1444 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose power amplifier applications AB...

Inchange Semiconductor

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