isc Silicon
PNP Power
Transistor
2SA753
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -110V(Min.
) ·Complement to Type 2SC1343 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for 100W audio amplifier power output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-140
V
VCEO Collector-Emitter Voltage
-110
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
IC
Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
-12
A
100
W
150
℃
Tstg
Storage Temperature
-55~150 ℃
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