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2SA738

POWER TRANSISTOR

Description

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -25V (Min) ·Good Linearity of hFE ·Complement to Type 2SC1368 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as driver stages in high-fidelity amplifiers and TV circuits. ABSOLUTE MAXIMUM RATINGS(...

Inchange Semiconductor

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