isc Silicon
PNP Power
Transistor
2SA473
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -30V(Min) ·Good Linearity of hFE ·Complement to Type 2SC1173 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications.
·Car radio and car stereo output stage applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-30
V
VCEO Collector-Emitter Voltage
-30
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-3
A
IE
Emitter Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-3.
0
A
10
W
150
℃
Tstg
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