Part Number
|
SEMIX453GD12VC |
Manufacturer
|
Semikron International |
Description
|
Trench IGBT |
Published
|
Jul 4, 2011 |
Detailed Description
|
net
SEMiX453GD12Vc
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 600 V V...
|
Datasheet
|
SEMIX453GD12VC
|
Overview
net
SEMiX453GD12Vc
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 673 513 450 1350 -20 .
.
.
20 Tj = 125 °C 10 -40 .
.
.
175 Tc = 25 °C Tc = 80 °C 516 385 450 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 1350 2430 -40 .
.
.
175 Tterminal = 80 °C AC sinus 50Hz, t = 1 min 600 -40 .
.
.
125 4000 V A A A A V µs °C A A A A A °C A °C V
Conditions
Values
Unit
SEMiX® 33c
VGES tpsc Tj IF IFnom
Inverse diode
SEMiX453GD12Vc Features
• Homogeneous Si • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no.
E63532
Tj = 175 °C
IFRM IFSM T...
Similar Datasheet