www.
DataSheet4U.
net
CEM11C2
Jul.
2002
Dual Enhancement Mode Field Effect
Transistor ( N and P Channel)
5
FEATURES
30V ,7A , RDS(ON)=30m Ω @VGS=10V.
RDS(ON)=42mΩ @VGS=4.
5V.
-20V , -4.
3A , RDS(ON)=90m Ω @VGS=-4.
5V.
RDS(ON)=120mΩ @VGS=-2.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Surface Mount Package.
SO-8 1
1 2 3 4
D1
8
D1
7
D2
6
D2
5
S1
G1 S2
G2
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @TJ=125 C b -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation a Operating Junction and Storage Temperature Range
a a
Symbol VDS...