Part Number
|
IDB30E120 |
Manufacturer
|
Infineon Technologies |
Description
|
Fast Switching Emitter Controlled Diode |
Published
|
Jul 7, 2011 |
Detailed Description
|
Fast Switching Emitter Controlled Diode
Feature • 1200 V Emitter Controlled technology • Fast recovery • Soft switching ...
|
Datasheet
|
IDB30E120
|
Overview
Fast Switching Emitter Controlled Diode
Feature • 1200 V Emitter Controlled technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • Easy paralleling
* RoHS compliant
IDB30E120
Product Summary
VRRM
1200
IF VF Tjmax
30 1.
65 150
V A V °C
PG-TO263-3-2
2
1 3
Type IDB30E120
Package
Ordering Code Marking Pin 1 PIN 2 PIN 3
PG-TO263-3-2
-
D30E120 NC
C
A
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Repetitive peak reverse voltage Continous forward current
TC=25°C TC=90°C
VRRM IF
Surge non repetitive forward current
IFSM
TC=25°C, tp=10 ms, sine halfwave
Maximum repetitive forward current
IFRM
TC=25°C, t...
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