3rd Generation thinQ!TM SiC
Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark
• No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 20mA2) • Optimized for high temperature operation • Lowest Figure of Merit QC/IF
Product Summary VDC QC IF; TC 130 °C
thinQ! 3G Diode designed for fast switching applications like: • SMPS e.
g.
; CCM PFC • Motor Drives; Solar Applications; UPS
IDD10SG60C
600 V 16 nC 10 A
Type IDD10SG60C
Package PG-TO252-3
M...