FDP18N50 / FDPF18N50 500V N-Channel MOSFET
April 2007
FDP18N50 / FDPF18N50
500V N-Channel MOSFET Features
• 18A, 500V, RDS(on) = 0.
265Ω @VGS = 10 V • Low gate charge ( typical 45 nC) • Low Crss ( typical 25 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
UniFET
Description
TM
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficient switch...