Part Number
|
PTFA190451E |
Manufacturer
|
Infineon Technologies |
Description
|
Thermally-Enhanced High Power RF LDMOS FET |
Published
|
Jul 11, 2011 |
Detailed Description
|
PTFA190451E PTFA190451F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1...
|
Datasheet
|
PTFA190451E
|
Overview
PTFA190451E PTFA190451F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz
net
Description
The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA, TD-SCDMA and other cellular standards in the 1930 to 1990 MHz frequency band.
These devices are available in thermally-enhanced packages with eared or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFA190451E Package H-36265-2
PTFA190451F Package H-37265-2
2-Carrier WCDMA Drive-up
VDD = 28 V, IDQ = 450 mA, ƒ = 1...
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