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PTFA191001F

Part Number PTFA191001F
Manufacturer Infineon Technologies
Description Thermally-Enhanced High Power RF LDMOS FET
Published Jul 11, 2011
Detailed Description PTFA191001E PTFA191001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, ...
Datasheet PTFA191001F




Overview
PTFA191001E PTFA191001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930 – 1990 MHz www.
DataSheet4U.
net Description The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA, IS-95 and CDMA2000 applications.
They are characterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz.
Thermally-enhanced packaging provides the coolest operation available.
PTFA191001E Package H-36248-2 PTFA191001F Package H-37248-2 Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 900 mA, ƒ = 1960 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing -23 35 Features • • • Drain Efficienc...






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