Part Number
|
PTFA191001F |
Manufacturer
|
Infineon Technologies |
Description
|
Thermally-Enhanced High Power RF LDMOS FET |
Published
|
Jul 11, 2011 |
Detailed Description
|
PTFA191001E PTFA191001F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 100 W, ...
|
Datasheet
|
PTFA191001F
|
Overview
PTFA191001E PTFA191001F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930 – 1990 MHz
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Description
The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA, IS-95 and CDMA2000 applications.
They are characterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz.
Thermally-enhanced packaging provides the coolest operation available.
PTFA191001E Package H-36248-2
PTFA191001F Package H-37248-2
Two-carrier WCDMA Drive-up
VDD = 30 V, IDQ = 900 mA, ƒ = 1960 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing
-23 35
Features
• • •
Drain Efficienc...
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