Part Number
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PTFA192401E |
Manufacturer
|
Infineon Technologies |
Description
|
Thermally-Enhanced High Power RF LDMOS FET |
Published
|
Jul 11, 2011 |
Detailed Description
|
PTFA192401E PTFA192401F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 240 W, ...
|
Datasheet
|
PTFA192401E
|
Overview
PTFA192401E PTFA192401F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz
net
Description
The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz.
Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFA192401E Package H-36260-2
PTFA192401F Package H-37260-2
Single-carrier WCDMA Drive-up
VDD = 30 V, IDQ = 1600 mA, ƒ = 1960 MHz, 3GPP WCDMA sig...
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