| Part Number | 2SA872 |
| Manufacturer | Hitachi Semiconductor |
| Title | Silicon PNP Epitaxial Transistor |
| Description | 2SA872, 2SA872A Silicon PNP Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SC1775/A Outline TO-92 (1) 1. ... |
| Features |
10 mA, I B = –1 mA VCE = –12 V, I C = –2 mA VCB = –25 V, IE = 0, f = 1 MHz VCE = –6 V, f = 10 Hz I C = –50 µA Rg = 50 kΩ f = 1 kHz Typ — — — — — — — 120 1.8 — –90 — — DC current tarnsfer ratio hFE1* hFE2 Base to emitter voltage VBE Collector to emitter saturation voltage 250 160 — — — — — –0.75... |
| File Size | 37.30KB |
| Datasheet |
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2SA872A : 2SA872, 2SA872A Silicon PNP Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SC1775/A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA872, 2SA872A Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SA872 –90 –90 –5 –50 300 150 –55 to +150 2SA872A –120 –120 –5 –50 300 150 –50 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) 2SA872 Item Collector to emitter breakdown voltage Collector cutoff current Symbol Min V(BR)CEO I CBO 1 2SA.
2SA876 : www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U www.DataSheet4U.com 4U.com DataSheet 4 U .com www.DataSHeet4U.com .
2SA877 : ·With TO-3 package ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2SA877 VCBO Collector-base voltage 2SA878 2SA877 VCEO Collector-emitter voltage 2SA878 VEBO IC PC Tj Tstg Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -120 -6 -10 100 150 -55~150 V A W Open emitter -120 -80 V CONDITIONS VALUE -80 V UNIT SavantIC Semiconductor www.DataSheet4U.com P.
2SA877 : ·High Power Dissipation- : PC= 100W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -10 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -4 A 100 W 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is r.
2SA878 : ·With TO-3 package ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2SA877 VCBO Collector-base voltage 2SA878 2SA877 VCEO Collector-emitter voltage 2SA878 VEBO IC PC Tj Tstg Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -120 -6 -10 100 150 -55~150 V A W Open emitter -120 -80 V CONDITIONS VALUE -80 V UNIT SavantIC Semiconductor www.DataSheet4U.com P.
2SA878 : ·With TO-3 package ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2SA877 VCBO Collector-base voltage 2SA878 2SA877 VCEO Collector-emitter voltage 2SA878 VEBO IC PC Tj Tstg Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -120 -6 -10 100 150 -55~150 V A W ℃ ℃ Open emitter -120 -80 V CONDITIONS VALUE -80 V UNIT Inchange Semiconductor Product Specific.
2SA879 : Transistor 2SA879 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1573 Unit: mm 5.9± 0.2 4.9± 0.2 q High collector to emitter voltage VCEO. +0.3 +0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) 2.54± 0.15 Ratings –250 –200 –5 –100 –70 1 150 –55 ~ +150 Unit V V V mA mA 0.45–0.1 1.27 13.5± 0.5 0.7–0.2 0.7± 0.1 8.6± 0.2 s Features 0.45–0.1 1.27 +0.2 ˚C ˚C s Electrical Characteristics Parameter Collector cutoff current C.
2SA879 : Transistor 2SA879 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1573 Unit: mm 5.9± 0.2 4.9± 0.2 q High collector to emitter voltage VCEO. +0.3 +0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) 2.54± 0.15 Ratings –250 –200 –5 –100 –70 1 150 –55 ~ +150 Unit V V V mA mA 0.45–0.1 1.27 13.5± 0.5 0.7–0.2 0.7± 0.1 8.6± 0.2 s Features 0.45–0.1 1.27 +0.2 ˚C ˚C s Electrical Characteristics Parameter Collector cutoff current C.