Type
OptiMOSTM3 Power-
Transistor
Features • Ideal for high frequency switching and sync.
rec.
• Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications
Type
IPA093N06N3 G
IPA093N06N3 G
Product Summary VDS RDS(on),max ID
60 V 9.
3 mW 43 A
Package Marking
PG-TO220 FP 093N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse3)
E AS
I D=50 A, R GS=...