| Part Number | 2SB0970 |
| Manufacturer | Panasonic Semiconductor |
| Title | Silicon PNP epitaxial planer type Transistor |
| Description | Transistor 2SB970 Silicon PNP epitaxial planer type For low-voltage output amplification Unit: mm s Features q q 2.8 –0.3 0.65±0.15 +0.2 +0.2... |
| Features |
q q
2.8 –0.3 0.65±0.15 +0.2 +0.25 1.5 –0.05 0.65±0.15 1.9±0.2 0.95 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.95 2.9 –0.05 1 +0.2 3 0.4 –0.05 +0... |
| File Size | 37.27KB |
| Datasheet |
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2SB0976 : Transistors 2SB0976 (2SB976) www.DataSheet4U.net Silicon PNP epitaxial planar type For low-frequency output amplification For DC-DC converter For stroboscope ■ Features • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC 0.7±0.1 Unit: mm 5.0±0.2 4.0±0.2 0.7±0.2 12.9±0.5 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −27 −18 −7 −5 −8 0.75 150 −55 to +150 Unit V V 1 2 3 0.45+0.15 –0.1 2.5+0.6 –.