SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Low Forward Voltage : VF=1.
0V (Max.
).
Small Package : VSM.
2 KDS221V SILICON EPITAXIAL PLANAR DIODE E B 1 3 MAXIMUM RATING (Ta=25 CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (1 s) Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING 20 20 200 * 100 * 300 * 100 150 -55 150 UNIT V V mA mA mA mW C P P DIM MILLIMETERS _ 0.
05 A 1.
2 + _ 0.
05 B 0.
8 + _ 0.
05 C 0.
5 + _ 0.
05 0.
3 + D _ 0.
05 1.
2 + E _ 0.
05 G 0.
8 + H 0.
40 _ 0.
05 J 0.
12 + _ 0.
05 K 0.
2 + P 5 A G H K J D 3...

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