2SK3474-01 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Applications for Switching Foot Print Pattern Absolute Maximum Ratings at Tc=25°C ( unless otherwise specified) Unit V V A Continuous drain current A A Pulsed drain current ID(puls] V Gate-source voltage VGS A Repetitive or non-repetitive IAR *2 mJ Maximum Avalanche Energy EAS *1 kV/µs Maximum Drain-Source dV/dt dV DS /dt kV/µs Peak Diode Recovery dV/dt dV/dt *3 Max.
power dissipation PD W W Operating and storage Tch °C temperature range Tstg °C *1 L=0.
228mH, Vcc=48V, See to Aval...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)