Part Number
|
RJP60D0DPP-M0 |
Manufacturer
|
Renesas Technology |
Description
|
Silicon N-Channel IGBT |
Published
|
Aug 8, 2011 |
Detailed Description
|
Preliminary Datasheet
RJP60D0DPP-M0
Silicon N Channel IGBT High Speed Power Switching
Features
Short circuit withstan...
|
Datasheet
|
RJP60D0DPP-M0
|
Overview
Preliminary Datasheet
RJP60D0DPP-M0
Silicon N Channel IGBT High Speed Power Switching
Features
Short circuit withstand time (5 s typ.
) Low collector to emitter saturation voltage VCE(sat) = 1.
6 V typ.
(IC = 22 A, VGE = 15 V, Ta = 25°C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding R07DS0173EJ0100 Rev.
1.
00 Mar 11, 2011
Outline
RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL)
C
G
1.
Gate 2.
Collector 3.
Emitter
1
2 3
E
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector dissipation Junction to case thermal impedance Junctio...
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