Part Number
|
RJK03B9DPA |
Manufacturer
|
Renesas Technology |
Description
|
Silicon N Channel Power MOS FET Power Switching |
Published
|
Aug 10, 2011 |
Detailed Description
|
Preliminary Datasheet
RJK03B9DPA
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable ...
|
Datasheet
|
RJK03B9DPA
|
Overview
Preliminary Datasheet
RJK03B9DPA
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.
5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 8.
3 m typ.
(at VGS = 10 V) Pb-free Halogen-free REJ03G1791-0320 Rev.
3.
20 May 12, 2010
Outline
RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2))
5 6 7 8 D D D D
5 6 7 8
4 G
4 3 2 1
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S S S 1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case...
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