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Transistors with built-in Resistor
UNR32A3
Silicon
NPN epitaxial planar type
Unit: mm
For digital circuits ■ Features
• Suitable for high-density mounting and downsizing of the equipment • Contribute to low power consumption
0.
33+0.
05 –0.
02 3
0.
10+0.
05 –0.
02
(0.
40) (0.
40) 0.
80±0.
05 1.
20±0.
05
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 80 100 125 −55 to +125 Unit V V mA mW °C °C
5°
0.
15 min.
0.
23+0.
05 –0.
02
1
2
0 to 0.
01
0.
52±0.
03
5°
1: Base 2: Emitter 3:...