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Transistors
2SD0814A (2SD814A)
Silicon
NPN epitaxial planar type
For high breakdown voltage low-frequency and low-noise amplification ■ Features
• High collector-emitter voltage (Base open) VCEO • Low noise voltage NV • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
1 2
Unit: mm
0.
40+0.
10 –0.
05 3 0.
16+0.
10 –0.
06
1.
50+0.
25 –0.
05
2.
8+0.
2 –0.
3
(0.
95) (0.
95) 1.
9±0.
1 2.
90+0.
20 –0.
05 10˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Co...