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Transistors
2SD0875 (2SD875)
Silicon
NPN epitaxial planar type
For low-frequency power amplification Complementary to 2SB0767 (2SB767) ■ Features
• Large collector power dissipation PC • High collector-emitter voltage (Base open) VCEO • Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
1 0.
4±0.
08 1.
5±0.
1 3˚
0.
4 max.
2.
6±0.
1
Unit: mm
4.
5±0.
1 1.
6±0.
2 1.
5±0.
1
4.
0+0.
25 –0.
20
2.
5±0.
1
1.
0+0.
1 –0.
2
3 2 0.
5±0.
08
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector curren...