VDS VGS max RDS(on) max (@VGS = -10V) Qg (typical) ID (@TC = 25°C) -30 ±20 37 13 d-8.
5 V V mΩ nC A TOP VIEW IRFHS9301PbF HEXFET® Power MOSFET D1 D2 G3 6D D 5D S 4S D D DG D D S S 2mm x 2mm PQFN Applications l Charge and Discharge Switch for Battery Application l System/load switch Features and Benefits Features Low RDSon (≤ 37mΩ) Low Thermal Resistance to PCB (≤ 13°C/W) Low Profile (≤ 1.
0 mm) Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification results in Benefits Lower Conduction Losses Enable better thermal dissipation Increased Power Density Easier Manufacturing Environmentally Friendlier...

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