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kr IXZ4DF18N50 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC-515 Driver combined with IXZ318N50 MOSFET Gate driver matched to MOSFET Features • Isolated substrate − high isolation voltage (2500V) − excellent thermal transfer − Increased temperature and power cycling capability • IXYS advanced Z-MOS process • Low Rds(ON) • Very low insertion inductance(2nH) • No beryllium oxide (BeO) or other hazardous materials • Built using the advantages and compatibility of CMOS and IXYS HDMOS™ processes • Latch-up protected • Low quiescent supply current Applications Advantages • Optimized for RF and high speed • Easy to mount—no insulators needed • High power density • Si...

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