Part Number
|
MT4953 |
Manufacturer
|
matrix microtech |
Description
|
Dual P-Channel High Density Trench MOSFET |
Published
|
Nov 7, 2011 |
Detailed Description
|
www.DataSheet.co.kr
MT4953
Dual P-Channel High Density Trench MOSFET DESCRIPTION
The MT4953 uses advanced technology ...
|
Datasheet
|
MT4953
|
Overview
www.
DataSheet.
co.
kr
MT4953
Dual P-Channel High Density Trench MOSFET DESCRIPTION
The MT4953 uses advanced technology to provide excellent Rds(on), low switching loss and reasonable price.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
¾ ¾ ¾ ¾ ¾
FEATURES
-30V/-4.
9A, RDS(ON) = 65mΩ @ VGS = -10V -30V/-3.
6A, RDS(ON) = 105mΩ @ VGS = -4.
5V Super high dense cell trench design for low RDS(ON) Rugged and reliable S...
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