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Part Number
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VSMY7850X01 |
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Manufacturer
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Vishay Siliconix |
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Description
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High Power Infrared Emitting Diode |
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Published
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Nov 20, 2011 |
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Detailed Description
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www.DataSheet.co.kr
VSMY7850X01
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Tech...
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Datasheet
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VSMY7850X01
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Overview
www.
DataSheet.
co.
kr
VSMY7850X01
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
FEATURES
• • • • • • • • • • • • • • • Package type: surface mount Package form: Little Star® Dimensions (L x W x H in mm): 6.
0 x 7.
0 x 1.
5 Peak wavelength: p = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity: = ± 60° Low forward voltage Designed for high drive currents: up to 1 A DC and up to 4 A pulses Low thermal resistance: RthJP = 10 K/W Floor life: 4 weeks, MSL 2a, acc.
J-STD-020 Lead (Pb)-free reflow soldering AEC-Q101 qualified Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
21783
DESC...
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