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SEMICONDUCTOR
TECHNICAL DATA
General Description
KHB011N40P1/F1/F2
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
KHB011N40P1
A O C F E G B Q I
DIM MILLIMETERS _ 0.
2 9.
9 + A B C D E
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for electronic ballast and switching mode power supplies.
FEATURES
VDSS(Min.
)= 400V, ID= 10.
5A Drain-Source ON Resistance : RDS(ON)=0.
53 @VGS =10V Qg(typ.
) =32.
5nC
K M L J D N N
P
F G H I J
15.
95 MAX 1.
3+0.
1/-0.
05 _ 0.
1 0.
8 + _ 0.
2 3.
6 + _ 0.
1 2.
8 + 3.
7 0.
5+0.
1/-0.
05 1.
5 _ 0.
3 13.
08 + 1.
46 _ 0.
1 1.
4 + _ 0.
1 1.
27 + _ ...