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2SB834
PNP Silicon Epitaxial Power
Transistor
P b Lead(Pb)-Free
Features: * DC Current Gain hFE = 60-200 @IC = 0.
5A * Low VCE(sat) ≤ 1.
0V(MAX) @IC = 3.
0A, IB = 0.
3A * Complememtary to
NPN 2SD880
COLLECTOR 2 BASE 1
1 2 3
3 EMITTER
1.
BASE 2.
COLLECTOR 3.
EMITTER
TO-220
Unit V V V A W W/˚C ˚C ˚C
ABSOLUTE MAXIMUM RATINGS (TA=25ºC) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Total Device Disspation TA=25°C TC=25°C Derate above 25°C
Symbol VCBO VCEO VEBO IC PD TJ Tstg
Value -60 -60 -7.
0 -3.
0 1.
5 30 0.
24 +150 -55 to +150
Junction Temperature Storage Temperature
ELECTRICAL CHARACTERISTICS Characteristics Coll...