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Built-in Avalanche Diode for Surge Absorbing Darlington
Silicon
NPN Triple Diffused Planar
Transistor sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD1796 60±10 60±10 6 4 0.
5 25(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
2SD1796
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=50V VEB=6V IC=10mA VCE=4V, IC=3A IC=3A, IB=10mA VCE=12V, IE=–0.
2A VCB=10V, f=1MHz 2SD1796 10max 10max 60±10 2000min 1.
5max 60typ 45 typ V MHz pF
13.
0min
Equivalent circuit
B
C
(3 k Ω)(1 5 0 Ω) E
Application : Driver for Solenoid, Relay and Motor and General Purpose
(Ta=25°C) Unit
External Dimensions FM20(TO220F)
4.
0±0.
...