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Naina Semiconductor emiconductor Ltd.
Schottky Barrier Rectifier Diode
Features • Fast Switching • Low forward voltage drop, VF • Guard ring protection • High surge capacity • High efficiency, low power loss
1N6391
Electrical Ratings (TC = 250C, unless otherwise noted)
Parameter Repetitive peak reverse voltage DC blocking voltage Non-repetitive peak reverse voltage Average rectified forward current 0 (TC = 85 C) Non-repetitive peak surge current (surge applied at rated load conditions, halfwave, single phase, 60 Hz Symbol VRRM 45 VDC VRSM IF(AV) 54 25 V A
DO-203AA 203AA (DO-4) (DO
Values
Units V
IFSM
600
A
Maximum Ratings (TC = 250C, unless otherwise noted)
Param...