Ordering number:676D
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SB808/2SD1012
Low-Voltage Large-Current Amplifier Applications
Package Dimensions
unit:mm 2033
[2SB808/2SD1012]
( ) : 2SB808
B : Base C : Collector E : Emitter SANYO : SPA
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
Ratings (–)20 (–)15 (–)5 (–)0.
7 (–)1.
5 250 125 –55 to +125
Unit V V V A A mW
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Cu...