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Transistor
2SD2359
Silicon
NPN epitaxial planer type
For low-frequency amplification
Unit: mm
1.
5±0.
1 4.
5±0.
1 1.
6±0.
2
s Features
2.
6±0.
1
0.
4max.
q q
Low collector to emitter saturation voltage VCE(sat).
Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
45°
1.
0–0.
2
+0.
1
0.
4±0.
08 0.
5±0.
08 1.
5±0.
1 3.
0±0.
15
4.
0–0.
20
0.
4±0.
04
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
3
2
1
(Ta=25˚C)
Ratings 2...