2SC1047
GENERAL DESCRIPTION
Silicon Epitaxial Planar
Transistor
High frequency, high power
transistors in a plastic envelope, primarily for use in audio and general purpose
QUICK REFERENCE DATA
SYMBOL
MT-100
CONDITIONS VBE = 0V TYP
VCESM VCEO IC ICM Ptot VCEsat VF tf
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time
Tmb 25 IC = 4.
0A; IB = 0.
4A IF = 4.
0A IC=4.
0A,IB1=-IB2=0.
4A,VCC=60V
1.
5 0.
35
MAX 160 140 12 100 3 2.
0 1.
0
UNIT V V A A W V V s
LIMITING VALUES
SYMBOL
VCESM VCEO VEBO IC IB Ptot Tstg Tj
PARA...