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kr Pre-Production FM18W08 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM  Organized as 32,768 x 8 bits  High Endurance 100 Trillion (1014) Read/Writes  38 year Data Retention  NoDelay™ Writes  Advanced High-Reliability Ferroelectric Process Superior to BBSRAM Modules  No Battery Concerns  Monolithic Reliability  True Surface Mount Solution, No Rework Steps  Superior for Moisture, Shock, and Vibration  Resistant to Negative Voltage Undershoots SRAM & EEPROM Compatible  JEDEC 32Kx8 SRAM & EEPROM pinout  70 ns Access Time  130 ns Cycle Time Low Power Operation  Wide Voltage Operation 2.
7V to 5.
5V  12 mA Active Current  20 A (...

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