DATA SHEET
SILICON
TRANSISTOR
2SC1623
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER
NPN SILICON EPITAXIAL
TRANSISTOR MINI MOLD
FEATURES • High DC Current Gain: hFE = 200 TYP.
(VCE = 6.
0 V, IC = 1.
0 mA) • High Voltage: VCEO = 50 V ABSOLUTE MAXIMUM RATINGS
PACKAGE DIMENSIONS
in millimeters
2.
8 ± 0.
2 0.
4 +0.
1 –0.
05 1.
5 0.
65 +0.
1 –0.
15
0.
95
Maximum Voltages and Current (TA = 25 ˚C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Maximum Power Dissipation Total Power Dissipation at 25 ˚C Ambient Temperature PT Maximum Temperatures Junction Temperature Storage Temperature Range Tj Tstg 150 ˚C –55 to +150 ˚C 200 mW
1.
1 to 1.
4
VCBO VCEO VEBO I...