isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 350V(Min.
) ·Collector Saturation Voltage-
: VCE(sat)= 1.
0V(Max.
)@ IC= 3A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in color TV receiver’s chopper supply.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
350
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
7
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC= 25℃
TJ
Junction Temperature
1
...