isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Voltage: VCEV= 330V(Min) ·Fast Switching Speed-
: tf= 0.
75μs(Max) ·Low Saturation Voltage-
: VCE(sat)= 1.
0V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in horizontal deflection output stages
of TV’s and CRT’s
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
330
V
VCEV
Collector-Emitter Voltage
330
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
10
A
IB
Base Current
PC
Collector Power Dissipation @ TC=25...