isc Silicon
NPN Power
Transistor
BU999
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 140V(Min) ·High Switching Speed ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for switching and linear applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
140
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
25
A
ICP
Collector Current-Pulse
40
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
10
A
106
W
150
℃
Tstg
Storage T...