DatasheetsPDF.com

GT100DA120U

Insulated Gate Bipolar Transistor

Description

www.DataSheet.co.kr GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 100 A FEATURES • Trench IGBT technology temperature coefficient • Square RBSOA • 10 μs short circuit capability • HEXFRED® antiparallel diodes with ultrasoft reverse recovery SOT-227 with positive • TJ maximum = 150 °C • Fully isolated package • Very l...


Vishay Siliconix

View GT100DA120U Datasheet






Similar Datasheet



@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)