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Ordering number : EN9078
VEC2801
SANYO Semiconductors
DATA SHEET
VEC2801
Features
• •
MOSFET : P-Channel Silicon MOSFET SBD :
Schottky Barrier Diode
General-Purpose Switching Device Applications
The best suited for DC / DC converter.
Composite type with a P-Channel Sillicon MOSFET and a
Schottky Barrier Diode contained in one package facilitating high-density mounting.
[MOSFET] • Low ON-resistance.
• 1.
8V drive.
[SBD] • Short reverse recovery time.
• Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel T...