isc Silicon
NPN Power
Transistor
BU105
DESCRIPTION ·High Voltage-VCER= 1300V(Min.
) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 5.
0V(Max.
)@ IC= 2.
5A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in line operated B&W(19 and 20 inch 110℃
deflection circuits ) or color ( 11 and 14 inch 90℃ deflection circuits TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1300
V
VCER
Collector-Emitter Voltage RBE= 100Ω
1300
V
VCEO
Collector-Emitter Voltage
750
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @T...