isc Silicon
NPN Power
Transistor
BU103A
DESCRIPTION ·Continuous Collector Current-IC= 1A ·Collector Power Dissipation-
: PC= 30W @TC= 25℃ ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for TV vertical applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
120
V
VCER
Collector-Emitter Voltage RBE= 220Ω
120
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
1
A
PC
Collector Power Dissipation@TC=25℃
30
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junc...