DATA SHEET
SILICON
TRANSISTOR
2SC2351
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL
TRANSISTOR MINI MOLD
FEATURES
• NF • MAG 1.
5 dB 14 dB TYP.
TYP.
@ f = 1.
0 GHz @ f = 1.
0 GHz
PACKAGE DIMENSIONS (Units: mm)
2.
8±0.
2
0.
4 −0.
05
+0.
1
1.
5
0.
65 −0.
15
+0.
1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
0.
95 0.
95
Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
VCEO VEBO IC PT Tj Tstg
12 3.
0 70 250 150 −65 to +150
V V mA mW °C
2.
9±0.
2
Collector to Base Voltage
VCBO
25
V
2
0.
3
°C
1.
1 to 1.
4
Marking
0.
16 −0.
06
+0.
1
PIN CONNECTIONS 1.
Emitter 2.
Base 3.
Collector
ELECTRICAL CHARACTERISTICS (TA...