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INCHANGE Semiconductor
isc Product Specification
isc Silicon
NPN Power
Transistor
DESCRIPTION ·700V Collector-Base Breakdown Capability ·Excellent Dynamic Saturation Characteristics ·Fast swithing ·Low Saturation Voltage ·Advanced Technology Replacement for the 2N6308 APPLICATIONS ·Designed in circuits requiring good dynamio saturation characteristics in swithing power supply applications and other inductive swithing circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCBO VCES VEBO IC IB
B
MJ6308
PARAMETER Collector-Base Voltage Collector-Emitter Sustaining Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@TC...