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INCHANGE Semiconductor
isc Product Specification
isc Silicon
NPN Darlingtion Power
Transistor
PMD1602K
DESCRIPTION ·High DC current gain ·Collector-Emitter Breakdown VoltageV(BR)CEO= 80V(Min) ·Complement to type PMD1702K
APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL VCBO VCEO VEBO IC ICP IB
B
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Current-Peak Base Current Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature
VALUE 80 80 5.
0 20 40 0.
5 180 150 -65~200
UNIT V V V A A A W ℃ ℃
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