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INCHANGE Semiconductor
isc Product Specification
isc Silicon
PNP Darlingtion Power
Transistor
PMD1703K
DESCRIPTION ·High DC current gain ·Collector-Emitter Breakdown VoltageV(BR)CEO= -100V(Min) ·Complement to type PMD1603K
APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL VCBO VCEO VEBO IC ICP IB
B
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Current-Peak Base Current Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature
VALUE -100 -100 -5.
0 -20 -40 -0.
5 180 150 -65~200
UNIT V V V A A...